• 文献标题:   Configurational Effects on Strain and Doping at Graphene-Silver Nanowire Interfaces
  • 文献类型:   Article
  • 作  者:   LEE F, TRIPATHI M, LYNCH P, DALTON AB
  • 作者关键词:   graphene, indium tin oxide, silver nanowire, strain, doping
  • 出版物名称:   APPLIED SCIENCESBASEL
  • ISSN:  
  • 通讯作者地址:   Univ Sussex
  • 被引频次:   0
  • DOI:   10.3390/app10155157
  • 出版年:   2020

▎ 摘  要

Graphene shows substrate-dependent physical and electronic properties. Here, we presented the interaction between single-layer graphene and silver nanowire (AgNW) in terms of physical straining and doping. We observed a snap-through event for single-layer graphene/AgNW at a separation of AgNWs of 55 nm, beyond the graphene suspended over the nanowires. The adhesion force between the Atomic Force Microscopy (AFM) tip apex and the suspended graphene was measured as higher than the conformed one by 1.8 nN. The presence of AgNW modulates the Fermi energy level of graphene and reduces the work function by 0.25 eV, which results in n-type doping. Consequently, a lateral p-n-p junction is formed with single AgNW. The correlation Raman plot between G-2D modes reveals the increment of strain in graphene of 0.05% due to the curvature around AgNW, and 0.01% when AgNW lies on the top of graphene. These results provide essential information in inspecting the physical and electronic influences from AgNW.