▎ 摘　　要

Doping is an efficient way to modify the electronic structure of graphene. Although there have been a considerable number of studies on the electronic structure of impurity-doped graphene, every study has suggested a different interpretation of the appearance of impurity levels of dopants located near the so-called zigzag edge of graphene nanoribbons (GNRs). Here, we propose a charge transfer model that satisfactorily explains the change in electronic structure upon N(B) doping of zigzag GNR (ZGNR). The structural stability and electronic structure of the doped ZGNR have been investigated using first-principles calculations based on the density functional theory. The formation energy of doping increases as a function of the distance between the N(B) atom and the zigzag edge, and two tendencies are observed depending on whether the dopant is an odd or even number of sites away from the zigzag edge. Such peculiar behavior of the formation energy can be successfully explained by charge transfer between the so-called edge state localized at the edge and the 2p-state of the dopant. Such an electron (hole) transfer leads to the compensation (disappearance) of the local spinmagnetic moment at one side of the ZGNR, manifesting in the ferromagnetic ground state of ZGNR. Published by AIP Publishing.