▎ 摘　　要

Over the past few years, the amazing properties of graphene have led to predictions for its use in a variety of areas, not the least of which is in semiconductor devices. But, the transport is an important aspect of any possible application. At low temperature, fluctuations are observed in the conductance through nanoribbons. These fluctuations arise from the presence of a random potential in the semiconductor, which arises from e. g. impurities present in the material structure. In this work, we examine the nature of these fluctuations in nanoribbons using an atomic basis quantum transport simulation.