▎ 摘　　要

Transition metal dichalcogenides (TMDs) have emerged as promising candidates for realizing p-n junction device applications. However, the realization of the modulation in the electronic properties of p-type TMDs still remains challenging. Here, we report an enhanced p-type electrical transport behavior in a hybrid structure of graphene quantum dot (GQD)/two dimensional (2D) WSe2. The incorporation of GQDs onto the surface of thin layer WSe2 triggers significantly the charge transfer from WSe2 to GQDs due to the band alignment at the interface. As a result, the increase in the spectral weight of positive charged trions occurs, leading to a red shift in the photoluminescence in the hybrid structure of GQD/WSe2. Because of the charge transfer, it results in 50 time improvement in the hole carrier mobility with a decreased threshold voltage in the hybrid structure compared to pristine WSe2. Our results pave the way for enhancing the performance of other 2D material-based electronic devices. Published by AIP Publishing.