• 文献标题:   Raman imaging of doping domains in graphene on SiO2
  • 文献类型:   Article
  • 作  者:   STAMPFER C, MOLITOR F, GRAF D, ENSSLIN K, JUNGEN A, HIEROLD C, WIRTZ L
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Swiss Fed Inst Technol
  • 被引频次:   158
  • DOI:   10.1063/1.2816262
  • 出版年:   2007

▎ 摘  要

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line-the most significant Raman peak to identify single-layer graphene-as a function of charging up to vertical bar n vertical bar approximate to 4x10(12) cm(-2). Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene. (C) 2007 American Institute of Physics.