• 文献标题:   Band gap and chemically ordered domain structure of a graphene analogue BxCyNz
  • 文献类型:   Article
  • 作  者:   VENU K, KANURI S, RAIDONGIA K, HEMBRAM KPSS, WAGHMARE UV, DATTA R
  • 作者关键词:   bcn, semiconductor, band gap, eels
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Jawaharlal Nehru Ctr Adv Sci Res
  • 被引频次:   5
  • DOI:   10.1016/j.ssc.2010.09.029
  • 出版年:   2010

▎ 摘  要

Chemically synthesized few layer graphene analogues of BxCyNz are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase electronic structure and band gap HREELS band gap studies of a BxCyNz composition reveal absorption edges at 2 08 3 43 and 6 01 eV indicating that the BxCyNz structure may consist of domains of different compositions The K-absorption edge energy position of the individual elements in BxCyNz is determined and compared with h-BN and graphite An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of BxCyNz (C) 2010 Elsevier Ltd All rights reserved