• 文献标题:   N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence
  • 文献类型:   Article
  • 作  者:   SANTHOSH NM, FILIPIC G, KOVACEVIC E, JAGODAR A, BERNDT J, STRUNSKUS T, KONDOS H, HORI M, TATAROVA E, CVELBAR U
  • 作者关键词:   graphene, graphene nanowall, plasma posttreatment, nitrogen incorporation, raman spectroscopy, vacancy defect
  • 出版物名称:   NANOMICRO LETTERS
  • ISSN:   2311-6706 EI 2150-5551
  • 通讯作者地址:   Jozef Stefan Inst
  • 被引频次:   6
  • DOI:   10.1007/s40820-020-0395-5
  • 出版年:   2020

▎ 摘  要

Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma-surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C-N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.