▎ 摘　　要

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for 3 x 10(5) s. In the OFF states, the I-V characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.