▎ 摘　　要

Due to its exceptionally high carrier mobility, International Technology Roadmap for Semiconductors considers graphene to be among the candidate materials for postsilicon electronics. In order to realize graphene-based devices, thin and uniform-coverage high-kappa dielectrics without any pinholes on top of graphene is required. There are no dangling bonds on defect-free graphene surface; it is difficult to grow uniform-coverage high-kappa dielectrics on graphene directly by atom layer deposition. Meanwhile, degradation of defects in graphene/high-kappa structure is necessary for the optimization of high-kappa dielectrics fabrication technology. Here the authors report on a H2O-based atom layer deposition method used for HfO2 growth, where physically adsorbed H2O molecules on graphene surface act as oxidant, and self-limit react with metal precursors to form HfO2 film onto graphene directly. Raman spectra reveal H2O-based atom layer deposition method will not introduce defects into graphene. The surface root mean square of HfO2 films is down to 0.9 nm and the capacitance of HfO2 films on graphene is up to 2.7 mu F/cm(2), which indicate high quality and compactness of HfO2 films. (C) 2014 American Vacuum Society.