• 文献标题:   Landauer-Datta-Lundstrom Model for Terahertz Transistor Amplifier Based on Graphene
  • 文献类型:   Article
  • 作  者:   DAVIDOVICH MV
  • 作者关键词:  
  • 出版物名称:   TECHNICAL PHYSICS
  • ISSN:   1063-7842 EI 1090-6525
  • 通讯作者地址:   Chernyshevsky Saratov State Univ
  • 被引频次:   0
  • DOI:   10.1134/S1063784217080059
  • 出版年:   2017

▎ 摘  要

A transistor has been considered in the form of three electrodes connected by graphene ribbons or by metal quantum wires (nanowires) that operate on the principle of the current control by the changing voltage at the central electrode (gate). The analysis has been carried out according to the Landauer-Datta-Lundstrom model in equilibrium approximation for electrodes while fixing their potentials. We have obtained linear models and nonlinear terms in the determining current, and calculated the nonlinear current-voltage performances of graphene nanoribbons.