• 文献标题:   Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene
  • 文献类型:   Article
  • 作  者:   TKACHENKO OA, TKACHENKO VA, BAKSHEEV DG, SUSHKOV OP
  • 作者关键词:  
  • 出版物名称:   JETP LETTERS
  • ISSN:   0021-3640 EI 1090-6487
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1134/S0021364022603219
  • 出版年:   2023

▎ 摘  要

Magnetotransport in mesoscopic samples with semiconductor artificial graphene has been simulated within the Landauer-Buttiker formalism. Model four-terminal systems in a high-mobility two-dimensional electron gas have a square shape with a side of 3-5 mu m, which is filled with a short-period (120 nm) weakly disordered triangular lattice of antidots at the modulation amplitude of the electrostatic potential comparable with the Fermi energy. It has been found that the Hall resistance R-xy(B) in the magnetic field range of B = 10-50 mT has a hole plateau R-xy =-R-0, where R-0 = h/2e(2) = 12.9 kO, at carrier densities in the lattice below the Dirac point n < n(1D) and an electron plateau R-xy =R-0 at n > n(1D). Enhanced disorder destroys the plateaus, but a carrier type (electrons or holes) holds. Long-range disorder at low magnetic fields suppresses quantized resistance plateaus much more efficiently than short-range disorder.