• 文献标题:   Plasmon-assisted resonant tunneling in graphene-based heterostructures
  • 文献类型:   Article
  • 作  者:   ENALDIEV V, BYLINKIN A, SVINTSOV D
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Moscow Inst Phys Technol
  • 被引频次:   4
  • DOI:   10.1103/PhysRevB.96.125437
  • 出版年:   2017

▎ 摘  要

We develop a theory of plasmon-assisted tunneling in graphene-insulator-graphene heterostructures and reveal the manifestations of such process in current-voltage curves, plasmon emission spectra, and junction electroluminescence. We present a unified framework for evaluation of tunneling due to carrier-carrier Coulomb scattering and due to emission of plasmons; the latter mechanism generally dominates the full inelastic current. Moreover, the plasmon-assisted current and plasmon emission rates possess resonant peaks at voltages providing equal energies, momenta, and group velocities of collective and single-particle interlayer excitations. This resonance is unique to the tunnel-coupled 2d systems of massless electrons and is deeply related to strong interactions between collinear carriers in graphene. The predicted effect can be used for design of efficient nanoscale voltage-tunable sources of photons and surface plasmons.