• 文献标题:   Non-destructive defect level analysis of graphene using amplitude-modulated discharge current analysis
  • 文献类型:   Article
  • 作  者:   KIM SM, LEE HI, LEE Y, KIM SY, YOO TJ, HEO S, KANG SC, HWANG HJ, LEE BH
  • 作者关键词:   buried gate graphene fet, charge trap density, defect energy level, afm tapping, discharge current analysis dca, amplitude modulated discharge current analysis amdca
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1016/j.carbon.2021.04.082 EA MAY 2021
  • 出版年:   2021

▎ 摘  要

The intrinsic characteristics of novel devices and materials are often misunderstood due to the characterization methods which are developed to analyze existing devices or materials. Even though graphene is a very well-known material, there hasn't been a proper method to assess the density and energy levels of defects in graphene non-destructively, especially after the device fabrication. Here, we report a new non-destructive defect analysis method, amplitude-modulated discharge current analysis (AMDCA). The validity of this method was confirmed using a graphene field effect transistor with physically predefined defect densities in the channel. Charge trap densities (N-ct) of the order of similar to 10(12) cm(-2) were observed at the defect level in the range of 0.15-0.29 eV. This method can be very useful for the in-depth study of graphene devices as well as other two-dimensional materials that don't have a body contact. (C) 2021 Published by Elsevier Ltd.