• 文献标题:   Graphene/h-BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications
  • 文献类型:   Article
  • 作  者:   SONG XJ, SUN JY, QI Y, GAO T, ZHANG YF, LIU ZF
  • 作者关键词:   application, chemical vapor deposition, graphene, hbn heterostructure, nanoelectronic, preparation
  • 出版物名称:   ADVANCED ENERGY MATERIALS
  • ISSN:   1614-6832 EI 1614-6840
  • 通讯作者地址:   Peking Univ
  • 被引频次:   0
  • DOI:   10.1002/aenm.201600541
  • 出版年:   2016

▎ 摘  要

Vertical heterostructures based on two-dimensional (2D) layered materials such as graphene and hexagonal boron nitride have emerged as a new paradigm of functional materials. Representing the thinnest and most commonplace 2D heterostructures, graphene/h-BN, have recently attracted considerable attentions due to their remarkable morphological, electrical, and thermal properties. Herein, this research news highlights recent advances in the preparation of graphene/h-BN heterostructures, especially via two representative routes involving the one-batch chemical vapor deposition and co-segregation growth methods. Furthermore, several promising applications of such heterostructures in energy-efficient nanoelectronics, energy conversion as well as energy harvesting are also introduced. The existing challenges and future directions with respect to the controllable preparation and the related applications of such graphene/h-BN heterostructures are finally proposed.