▎ 摘　　要

Aluminum was deposited on epitaxial monolayer-grown graphene on SiC (0001). The effects of annealing up to 1200 degrees C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron -based techniques at the MAX Laboratory. After heating at around 400 degrees C, Al islands or droplets are observed on the surface and the collected Si 2p, Al 2p, and C 1s core levels spectra indicate Al intercalation at the graphene SiC interface. Also, the original single Jr -band splits into two, indicating decoupling of the carbon buffer layer and the formation of a quasi-free-standing bilayer-like electronic structure. Further heating at higher temperatures from 700 to 900 degrees C yields additional chemical reactions. Broader core level spectra are then observed and clear changes in the Jr -bands near the Dirac point are detected. More electron doping was detected at this stage since one of the irbands has shifted to about 1.1 eV below the Fermi level. Different ordered phases of (7 x 7), (4 x 4), (1 x 1)Ai, and (1 x 1)G were also observed on the surface in this temperature range. The original single Jr-band was restored after heating at 1200 degrees C, although an Al signal was still able to be detected.