▎ 摘　　要

The development rate of graphene-related research is tremendous. New methods of graphene growth and transfer are reported on a regular basis, trending towards large-scale. Nevertheless, the fabrication of high-yield and low-cost graphene devices is still challenging. In this work, we approach this problem from a technological point of view and propose a new, so-called "high-throughput transfer technique". The technique allows a semi-automatic transfer of graphene films right at the desired places on a wafer. We demonstrate the applicability of our method by aligning 52 graphene devices on a 4-inch wafer using only 4 cm(2) of graphene. The overall yield of this process is over 90%. (C) 2016 Elsevier Ltd. All rights reserved.