▎ 摘　　要

High-quality large-area graphene/h-BN vertical heterostructures are promising building blocks for many viable applications such as energy harvesting/conversion, electronics and optoelectronics. Here, we successfully grew high-quality large-area graphene/h-BN vertical heterostructures on Pt foils by one-batch low-pressure chemical vapor deposition (LPCVD). We obtained the high quality of about 200-mu m-wide graphene/h-BN film having uniform layer thickness. Moreover, the obtained graphene/h-BN heterostructures exhibited field effect mobility of up to 7,200 cm(2)V(-1)s(-1) at room temperature. These results suggest that such graphene/h-BN heterostructures on recyclable Pt foils grown by LPCVD are promising for high-performance graphene-based electronics.