▎ 摘　　要

AlGaN-based materials are bandgap-tunable broadband semiconductor, which are ideal for ultraviolet opto-electronic devices. Although great progress has been made in deep-ultraviolet (DUV) LEDs research, there is still a large gap in external quantum efficiency compared to blue LEDs. In this work, AlGaN-based UV films were epitaxially grown on graphene/SiC, using weaker van der Waals forces of graphene to mitigate mismatch be-tween epitaxial layer and heterogeneous substrate. The results show luminescence intensity of DUV films on graphene/SiC is improved more than one order of magnitude, meanwhile stress of epitaxial films on graphene/ SiC is substantially reduced compared with that on sapphire substrate. These characterizations offer avenue for better understanding microstructural defects and optical properties of DUV-LED on graphene.