• 文献标题:   Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
  • 文献类型:   Article
  • 作  者:   DE LA BARRERA SC, FEENSTRA RM
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Carnegie Mellon Univ
  • 被引频次:   13
  • DOI:   10.1063/1.4914324
  • 出版年:   2015

▎ 摘  要

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene. (C) 2015 AIP Publishing LLC.