• 文献标题:   Intrinsic energy dissipation in CVD-grown graphene nanoresonators
  • 文献类型:   Article
  • 作  者:   QI ZN, PARK HS
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Dept Mech Engn
  • 被引频次:   24
  • DOI:   10.1039/c2nr30493g
  • 出版年:   2012

▎ 摘  要

We utilize classical molecular dynamics to study the quality (Q)-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from the CVD growth process, on the Q-factors. For a range of misorientation angles that are consistent with those seen experimentally in CVD-grown graphene, i. e. 0 degrees to similar to 20 degrees, we find that the Q-factors for graphene with intrinsic grain boundaries are 1-2 orders of magnitude smaller than that of pristine monolayer graphene. We find that the Q-factor degradation is strongly influenced by both the symmetry and structure of the 5-7 defect pairs that occur at the grain boundary. Because of this, we also demonstrate that the Q-factors of CVD-grown graphene can be significantly elevated, and approach that of pristine graphene, through application of modest (1%) tensile strain.