• 文献标题:   Conductance distribution in doped and defected graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   LA MAGNA A, DERETZIS I, FORTE G, PUCCI R
  • 作者关键词:   doping, electric admittance, fluctuation, graphene, nanostructured material, vacancies crystal
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   CNR
  • 被引频次:   28
  • DOI:   10.1103/PhysRevB.80.195413
  • 出版年:   2009

▎ 摘  要

Electronic transport at the mu m length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.