• 文献标题:   Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
  • 文献类型:   Article
  • 作  者:   FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T
  • 作者关键词:  
  • 出版物名称:   NEW JOURNAL OF PHYSICS
  • ISSN:   1367-2630
  • 通讯作者地址:   Univ Erlangen Nurnberg
  • 被引频次:   54
  • DOI:   10.1088/1367-2630/15/4/043031
  • 出版年:   2013

▎ 摘  要

We report a Raman study of the so-called buffer layer with (6 root 3 x 6 root 3) R30 degrees periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D-and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.