▎ 摘　　要

The development of two-dimensional (2D) magnetic semiconductors promotes the study of nonvolatile control of magnetoelectric nanodevices. MnBi2Te4 is the first realization of antiferromagnetic topological insulator. In semiconductor circuits, metal-semiconductor contacts are usually essential. In future all-carbon circuits, graphene is a promising material for 2D conductive connections. This work studies electronic transport through graphene-MnBi2Te4-graphene junctions. We find that graphene-MnBi2Te4 interfaces are perfect Ohmic contacts, which benefits the use of MnBi2Te4 in carbon circuits. The currents through MnBi2Te4 junctions possess high spin polarization. Compared with usual van der Waals junctions, lateral graphene-MnBi2Te4-graphene junctions present a lower barrier and much higher conductance to electrons. These findings may provide guidance for further study of 2D spin filtering.