• 文献标题:   Inks of dielectric h-BN and semiconducting WS2 for capacitive structures with graphene
  • 文献类型:   Article
  • 作  者:   DESAI JA, MAZUMDER S, HOSSAIN RF, KAUL AB
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746 EI 2166-2754
  • 通讯作者地址:   Univ North Texas
  • 被引频次:   0
  • DOI:   10.1116/6.0000092
  • 出版年:   2020

▎ 摘  要

We present dispersions of WS2 and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices. An all-inkjet-printing approach was used to print graphene-h-BN-graphene capacitors along with graphene-WS2-graphene structures. As the number of passes for inkjet printing the h-BN layer within graphene electrodes was increased, the leakage currents successively decreased. The capacitance-frequency (C-f) measurement data for the printed capacitor (with 40 passes of h-BN) within graphene electrodes showed that at similar to 1kHz, the maximum capacitance was similar to 62pF, and with increasing frequency, the capacitance value decreases. The inkjet printed graphene-WS2-graphene heterostructure devices were also constructed using horn tip sonication, where the C-f measurements revealed that C as high as similar to 324.88pF was attainable, which was largely frequency independent up to similar to 20kHz. This is in contrast with the h-BN layer integrated with graphene electrodes, where the measured C was more than similar to 5 times lower over the range of frequencies tested and also exhibited a strong decay as frequency increased from 1kHz.