▎ 摘　　要

We developed a new general approach to address individual graphene sheets in few-layer graphene by Raman spectroscopy. Our method is based on isotope labeling of individual layers during their synthesis and subsequent transfer to form multilayered graphene. The power of the procedure is demonstrated in the analysis of the interactions of individual layers with the substrate and with the environment. In addition, we measured Raman spectra of individual graphene layers in 3-LG during electrochemical doping. We show that they do not exhibit the same level of doping as one another and the doping level is dependent on layer position with respect to the substrate.