▎ 摘　　要

Stacking order of multilayer graphene (MLG) has attracted elevated interest because one can expect that rotationally faulted MLG has the charge transfer properties similar to those of single layer graphene. In our work, we studied MLG stacking on Ni catalyst using Raman spectroscopy. The Raman characterization revealed several combinations of in-plane and out-of-plane Raman modes showing formation of a great variety of MLG domains on Ni where Bernal-stacked and rotationally faulted graphene layers were found to exist together as well as separately in the films. The domains included those with very intense ( resonant) G band, attesting a possibility to obtain MLG with a fixed critical rotation angle of 13 degrees between adjacent graphene layers through the whole thickness of MLG. In addition, a combined phonon structure in the range of 90-200 cm(-1), a new mode at 3170-3180 cm(-1) interpreted as the 2G overtone, and an 867 cm(-1) peak that can be attributed to ZO-like breathing induced by a strong interaction of Ni substrate with the first layers of MLG. (C) 2015 Elsevier Ltd. All rights reserved.