• 文献标题:   Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs)
  • 文献类型:   Article
  • 作  者:   ALI M, SOKOLOV A, KO MJ, CHOI C
  • 作者关键词:   graphene oxide, light stimulation, diffusive memristor, threshold switching, synapse device
  • 出版物名称:   JOURNAL OF ALLOYS COMPOUNDS
  • ISSN:   0925-8388 EI 1873-4669
  • 通讯作者地址:  
  • 被引频次:   9
  • DOI:   10.1016/j.jallcom.2020.157514
  • 出版年:   2021

▎ 摘  要

Carbon-based organic material such as nitrogen-doped graphene oxide quantum dots (N-GOQDs) is a new-class material with unique biocompatible, high chemical inertness, and elevated photoluminescence properties. Two-terminal diffusive memristors can faithfully replicate biological synapse function via mutual similarities of in-/out-diffusion of Ag+ ions with biological Ca2+ migration dynamics for neural network applications. Inspired by hetero-plasticity phenomenon, in which Ca2+ dynamics can also be tuned by the 3rd counterpart - neuromodulatory axon, in this study, using an ultra-violet light source, we develop N-GOQDs based diffusive memristor that performs light-modulated synaptic behaviors. Specifically, photo-sensitive N-GOQDs ionic conductor shows n-pi* electron transitions under UV excitation; yet, nitrogen-doping further facilitates the electron transitions, giving out additional conductance induced by light. Further, we demonstrate endurable threshold resistive switching (TS) behavior based on Ag+ ions migration and its variety of facilitations via assisted UV illumination. The enhancement of post-synaptic current under assisted UV light, as well as the light stimulated transition from short-to long-term memory potentiation have been achieved. These findings are believed to be a step forward for the realization of higher bandwidth synapse modulation as future hardware-based neural network applications. (C) 2020 Elsevier B.V. All rights reserved.