• 文献标题:   Semimetal-antiferromagnetic insulator transition in graphene induced by biaxial strain
  • 文献类型:   Article
  • 作  者:   LEE SH, KIM S, KIM K
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Samsung Adv Inst Technol
  • 被引频次:   11
  • DOI:   10.1103/PhysRevB.86.155436
  • 出版年:   2012

▎ 摘  要

We report first-principles calculations on the antiferromagnetic spin ordering in graphene under biaxial strain. Using hybrid functional calculations, we found that the semimetallic graphene sheets undergo a transition to antiferromagnetic insulators at a biaxial strain of 7.7% and that the band gap rapidly increases after the onset of this transition before reaching 0.9 eV at a biaxial strain of 12%. We examined the competition of the antiferromagnetic spin ordering with two-dimensional Peierls distortions upon biaxial strain, and found that the preceding antiferromagnetic insulator phase impedes the Peierls insulator phase. The antiferromagnetic insulator phase is destabilized upon carrier filling but robust up to moderate carrier densities. This work indicates that biaxially strained graphene represents a noble system where the electron-electron and electron-lattice interactions compete with each other in a simple but nontrivial way.