▎ 摘　　要

A SWCNT-G/Si hybrid film was fabricated from graphene (G) film by chemical vapor deposition and single-walled carbon nanotubes (SWCNTs) by an immobilization method, in which a 3-aminopropyltriethoxysilane monolayer was formed on a UV irradiated graphene film by self-assembly, and acid-oxidized SWCNTs were chemisorbed on it. The G/Si, 3-aminopropyltriethoxysilane immobilized G/Si and SWCNT-G/Si hybrid films were characterized by SEM, Raman spectroscopy, XPS, and conductivity and electrochemical tests. Results indicate that the immobilization changes the p-type G/Si into n-type by electron donation from a lone electron pair on the amine and the chemisorption reduces the n-type behavior. The SWCNT-G/Si hybrid film has a higher specific capacitance than the G/Si film. This approach could be of great use in the fabrication of supercapacitors, flexible hybrid electrodes and other devices.