• 文献标题:   Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films
  • 文献类型:   Article
  • 作  者:   SMIRNOV VA, MOKRUSHIN AD, DENISOV NN, DOBROVOLSKII YA
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826 EI 1090-6479
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   0
  • DOI:   10.1134/S106378261803020X
  • 出版年:   2018

▎ 摘  要

Proton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2-3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to similar to 10%), while it is almost lacking in Nafion films (< 1%).