▎ 摘　　要

The high-kappa polymer P(VDF-TrFE-CFE) is applied in the dielectric layer of a thin film transistor based on graphene, inducing a considerable overall performance improvement compared with conventional SiO2 or ordinary polymer PMMA dielectrics. A systematical study reveals the reason for this improvement to be the strong screening effect on the Coulomb scattering in the dielectric-semiconductor interface, which originates from the high-kappa value of P(VDF-TrFE-CFE). This positive effect is dominant enough to compensate for the adverse effects induced by the application of P(VDF-TrFE-CFE), including the large surface roughness and strong phonon scattering. A prototype transistor fabricated on a plastic substrate shows similar superior performance and sustainability upon bending operation, testifying the adaptability of P(VDF-TrFE-CFE) in a flexible graphene transistor. This study proposes a high-kappa polymer dielectric that is valid for high-performing transistors based on 2D semiconductor materials.