▎ 摘　　要

A novel optical gating method is demonstrated to achieve controllable ambipolar tuning of graphene on diverse semiconductor substrates. Furthermore, electronic fabrication to form erasable electronic superlattices in structurally homogenous graphene is proposed based on selective optical gating. The created p-p+superlattices exhibits counterintuitive transport properties, which can be attributed to nonlinear effects in the carrier dynamics around the interfaces.