• 文献标题:   High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
  • 文献类型:   Article
  • 作  者:   MUDD GW, SVATEK SA, HAGUE L, MAKAROVSKY O, KUDRYNSKYI ZR, MELLOR CJ, BETON PH, EAVES L, NOVOSELOV KS, KOVALYUK ZD, VDOVIN EE, MARSDEN AJ, WILSON NR, PATANE A
  • 作者关键词:   graphene, indium selenide, photoconductivity, van der waals crystal
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Univ Nottingham
  • 被引频次:   142
  • DOI:   10.1002/adma.201500889
  • 出版年:   2015

▎ 摘  要

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.