• 文献标题:   Immobilization of Amino Acids on Graphene Nanosheets for BioFETs
  • 文献类型:   Article
  • 作  者:   SIDDIQUE S, MUKHTAR H
  • 作者关键词:   amino acid, field effect transistor, electrical transport, ndoping, raman spectroscopy
  • 出版物名称:   JOURNAL OF NANOELECTRONICS OPTOELECTRONICS
  • ISSN:   1555-130X EI 1555-1318
  • 通讯作者地址:   GC Univ Lahore
  • 被引频次:   0
  • DOI:   10.1166/jno.2019.2571
  • 出版年:   2019

▎ 摘  要

As an ideal biocompatible 2D nanomaterial, the graphene holds significant electrical properties which pave the way towards next generation bioelectronics. High surface sensitivity of graphene open up the ways to modulate its properties by external treatments e.g., optical or chemical treatments on the surface of Graphene field-effect-transistors (GFETs). Here, we study the influence of nitrogen containing functional groups (amino acids) on the electrical performance of GFETs. The electrical transport measurement of transistors were carried out to investigate the effect of these biomolecules upon the periods of different reaction time. We found the treatment time dependent downshift in charge neutrality point toward negative voltages which is an indication for enhancement of electron concentrations in the channel (graphene) of GFET. Raman spectroscopy was also adopted to confirm the properties of graphene before and after chemical treatment. Furthermore, a thorough analysis for performance trend of devices were carried out which show a drastic increase in the charge carrier mobilities and results were compared for two different amino acids (L-Proline and L-Aspartic acid). The fallouts specify that biochemical treatment is a noteworthy approach to improve the electrical properties of graphene, which can be utilized for bioelectronic applications.