• 文献标题:   In Situ High Temperature Atomic Level Studies of Large Closed Grain Boundary Loops in Graphene
  • 文献类型:   Article
  • 作  者:   GONG CC, HE K, CHEN Q, ROBERTSON AW, WARNER JH
  • 作者关键词:   graphene, dislocation, grain boundary, tem
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Oxford
  • 被引频次:   9
  • DOI:   10.1021/acsnano.6b04959
  • 出版年:   2016

▎ 摘  要

We use an in situ heating holder within an aberration corrected transmission electron microscope (AC-TEM) to study the structure and dynamics of large closed grain boundary (GB) loops in graphene at the atomic level. Temperatures up to 800 degrees C are used to accelerate dynamic evolution of the defect clusters, increasing bond rotation and atomic addition/loss. Our results show that the large closed GB loops relax under electron beam irradiation into several isolated dislocations far apart from each other. Line defects composed of several adjacent excess-atom clusters can be found during the reconfiguration process. Dislocation ejection from the closed GB loops are seen in real time and are shown to help the reduction in loop size. These results show detailed information about the stability and behavior of large GB loops in 2D materials that have importance in the high temperature processing of these materials.