▎ 摘　　要

Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 mu m to similar to 310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between similar to 43 and 73 mN m(-1). Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm(2) V-1 s(-1) for rubrene and from 0.6 to 0.1 cm(2) V-1 s(-1) for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as, 50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.