• 文献标题:   Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   ZHANG L, WANG YS, DONG YF, ZHAO X, FU C, HE DW
  • 作者关键词:   mos2, seed, graphene quantum dots gqds, continuous film
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 1741-4199
  • 通讯作者地址:   Beijing Jiaotong Univ
  • 被引频次:   0
  • DOI:   10.1088/1674-1056/27/1/018101
  • 出版年:   2018

▎ 摘  要

The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous.