▎ 摘　　要

In this paper, we report on an in-depth study on the growth of nickel silicides, either on a clean Ni(111) substrate or in the presence of a previously-grown epitaxial single graphene (Gr) layer, by means of Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). We demonstrate that two different nickel silicides, namely Ni3Si and Ni2Si, progressively form as the annealing temperature is increased from 450 degrees C to 600 degrees C. The presence of the Gr layer does not change the nature of the two silicide phases but rather affects the morphology of the silicide overlayer. Indeed, in the presence of Gr, the deposited silicon atoms intercalate by passing through the Gr defects or domain boundaries and accumulate on specific sample areas, resulting in the formation of multilayer silicide islands. In the absence of Gr, the deposited silicon atoms react uniformly with the nickel substrate, resulting in the formation of homogeneous large scale silicide layers.