▎ 摘　　要

Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5 x 10(-4) to 7.8 x 10(-5) Omega.cm(2) by pre-annealing at 300 degrees C for one hour, and continues to decrease to 9.5 x 10(-7) Omega.cm(2) after post-annealing at 490 degrees C for 60 seconds. These approaches provide reliable means of lowering contact resistance.