• 文献标题:   Carbon Free Nickel Subsurface Layer Tessellating Graphene on Ni(111) Surface
  • 文献类型:   Article
  • 作  者:   BENAYAD A, LI XS
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447 EI 1932-7455
  • 通讯作者地址:   Samsung Elect Corp
  • 被引频次:   15
  • DOI:   10.1021/jp312760z
  • 出版年:   2013

▎ 摘  要

The electronic structure of the interface graphene/Ni(111) substrate is reinterpreted based on X-ray photoelectron spectroscopy depth profile study. Using a newly developed Argon gas cluster ion beam sputtering system, we probed the variation of C 1s, Ni 2p core level peaks, valence band, and Ni L3M45M45 Auger transition lines described within Wagner plot methodology with the aim to shed light on the graphene growth mechanism on nickel substrate. We found the presence of thin carbon free nickel subsurface layer located between graphene layers and bulk nickel carbide. The gradient change in the d-band electronic structure through this subsurface layer affects the intrinsic properties of nickel substrate (carbon solubility and diffusivity) and may play a crucial role in the graphene growth mechanism.