▎ 摘　　要

The performance of graphene based heterojunction solar cell on silicon substrate has been studied theoretically by Technology Computer Aided Design (TCAD) tools. The current-voltage curves and internal quantum efficiency of this device have been calculated at different conditions using tow dimensional model. The results indicate the power conversion efficiency of graphene silicon junction cell strongly dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. In particular, the dark current got a sharp rise at higher concentration of 1e17 cm(-3) for n-type silicon, which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene heterojunction solar cell design.