• 文献标题:   A new strategy to prepare N-doped holey graphene for high-volumetric supercapacitors
  • 文献类型:   Article
  • 作  者:   DONG XW, HU NT, WEI LM, SU YJ, WEI H, YAO L, LI XL, ZHANG YF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY A
  • ISSN:   2050-7488 EI 2050-7496
  • 通讯作者地址:   Shanghai Jiao Tong Univ
  • 被引频次:   46
  • DOI:   10.1039/c6ta01406b
  • 出版年:   2016

▎ 摘  要

N-doped holey graphene (N-HG) was successfully prepared by a novel "Bottom-up" strategy with scalable and low cost characteristics. The as-obtained N-HG possessed amounts of in-plane holes, a high specific surface area (1602 m(2) g(-1)), a high nitrogen content and could be easily stacked to form a high density carbon monolith which presented a maximum volumetric capacitance of 397 F cm(-3) for supercapacitors.