• 文献标题:   Graphene Nanoscroll Geometry Effect on Transistor Performance
  • 文献类型:   Article
  • 作  者:   AHMADI MT, AHMADI R, NGUYEN TK
  • 作者关键词:   graphene nanoscroll, schottky transistor, tunneling, chirality number
  • 出版物名称:   JOURNAL OF ELECTRONIC MATERIALS
  • ISSN:   0361-5235 EI 1543-186X
  • 通讯作者地址:   Ton Duc Thang Univ
  • 被引频次:   2
  • DOI:   10.1007/s11664-019-07801-7
  • 出版年:   2020

▎ 摘  要

Graphene nanoscrolls (GNSs) with interesting geometry are ideal candidates for nanotechnology applications, particularly in nanoelectronics. Hence, in recent years, much attention has been paid to investigation of GNS applications owing to their remarkable properties. In this paper, a GNS-based Schottky transistors is analytically modeled. In the presented model the diverse arrangement of zigzag graphene nanoscrolls are assumed to form Schottky contacts. Based on the proposed design, the electronic parameters such as dispersion relation, density of states and effective mass by considering the effect of chirality number are investigated. As a main parameter, transmission probability is surveyed, and current-voltage characteristic under quantum tunneling effect is presented. Finally, the influences of barrier length, gate-source voltage and chirality number on I-V characteristics are explored. It is concluded that chirality number plays an important role compare to the other parameters.