• 文献标题:   The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene
  • 文献类型:   Article
  • 作  者:   KATOH T, IMAMURA G, OBATA S, BHANUCHANDRA M, COPLEY G, YORIMITSU H, SAIKI K
  • 作者关键词:  
  • 出版物名称:   PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • ISSN:   1463-9076 EI 1463-9084
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   5
  • DOI:   10.1039/c5cp02032h
  • 出版年:   2015

▎ 摘  要

Doping of heteroatoms such as nitrogen into the lattice structure of graphene can tune and tailor the overall electronic properties. N-doped graphene, depending on the nitrogen bonding mode and/or bonding configuration, displays subtly altered properties in comparison to pristine graphene. However, there remains a disappointing shortage of reliable methods for introducing dopants in a controlled and reproducible manner, preventing a thorough understanding of the relationship between structure and properties. In this study we aimed to prepare graphenes with nitrogen atoms doped at a graphitic (quaternary) site by depositing a source molecule containing a graphitic nitrogen atom: 4,4,8,8,12,12-hexamethyl-8,12-dihydro-4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine or 4H-benzo[9,1] quinolizino[3,4,5,6,7-defg] acridine-4,8,12-trione, on a heated Pt(111) substrate. At 400 degrees C, graphene with nitrogen atoms exclusively doped at a graphitic site was synthesized from the former molecule, while not from the latter molecule at any temperature. The present result indicates that the rational design of a source molecule is quite important for controlling the nitrogen doped site in the graphene lattice.