• 文献标题:   Photogating for small high-responsivity graphene middle-wavelength infrared photodetectors
  • 文献类型:   Article
  • 作  者:   FUKUSHIMA S, SHIMATANI M, OKUDA S, OGAWA S, KANAI Y, ONO T, INOUE K, MATSUMOTO K
  • 作者关键词:   graphene, graphene photodetector, field effect transistor, infrared sensor, middlewavelength infrared
  • 出版物名称:   OPTICAL ENGINEERING
  • ISSN:   0091-3286 EI 1560-2303
  • 通讯作者地址:   Mitsubishi Electr Corp
  • 被引频次:   2
  • DOI:   10.1117/1.OE.59.3.037101
  • 出版年:   2020

▎ 摘  要

We demonstrated a middle-wavelength infrared (MWIR) graphene photodetector using the photogating effect. This effect was induced by photosensitizers situated around a graphene channel that coupled incident light and generated a large electrical charge. The graphene-based MWIR photodetector consisted of a top graphene channel, source-drain electrodes, an insulator layer, and a photosensitizer, and its photoresponse characteristics were determined by current measurements. Irradiation of the graphene channel of the vacuum cooled device by an MWIR laser generated a clear photoresponse, as evidenced by modulation of the output current during irradiation. The MWIR photoresponse with the photogating effect was 100 times greater than that obtained from conventional graphene photodetectors without the photogating effect. The device maintained its MWIR photoresponse at temperatures up to 150 K. The effect of the graphene channel size on the responsivity was evaluated to assess the feasibility of reducing the photodetector area, and decreasing the channel area from 100 to 25 mu m(2) improved the responsivity from 61.7 to 321.0 AW(-1). The results obtained in our study will contribute to the development of high-performance graphene-based IR imaging sensors. (C) The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License.