• 文献标题:   On the Theory of the Electronic States of a "Quantum Dot-Graphene-SiO2 + n(+)-Si Substrate" System
  • 文献类型:   Article
  • 作  者:   ALISULTANOV ZZ
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826 EI 1090-6479
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   5
  • DOI:   10.1134/S106378261306002X
  • 出版年:   2013

▎ 摘  要

The electronic states of a "quantum dot-graphene monolayer-SiO2 + n (+)-Si substrate" system in an external magnetic field are studied. An analytical expression for charge transfer in this system is obtained. The electronic states of a "quantum dot-graphene bilayer-SiO2 + n (+)-Si substrate" system are considered. The systems under study are interesting from the viewpoint of controlling the optical properties of a quantum dot by means of an applied electric field.