▎ 摘　　要

We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution-processed graphene oxide (GO) and n-Si. Partially reduced GO with a high optical gap (2.8 eV) was spin-coated on the n-Si substrate and a heterojunction device was fabricated with the structure of Au/pr-GO/n-Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built-in electric potential at the GO/n-Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes. Solid state heterojunction device fabricated with solution-processed graphene oxide (high optical gap approximate to 2.8 eV) and n-Si. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)