▎ 摘　　要

We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm 2 substrate of 500 mu m thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 mu Ci Na-22 positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of approximate to 20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids. Published by AIP Publishing.