▎ 摘　　要

A Cu/graphene oxide (GO)/SiO2/Pt structure was synthesized in order to investigate the effects of the GO layer on the properties of resistive memory. The resistance of the Cu/GO/SiO2/Pt structure can be reversibly switched between a high-resistance state and a low-resistance state by dc voltages with different polarities. Such resistance switching is dominated by the electrochemical reaction with Cu conducting filaments. The folded and layered structure of the GO film was found to limit the number of available pathways for Cu ion migration, resulting in the formation of fewer Cu conducting filaments in the SiO2 layer. Hence, the GO layer improved the stability of resistance switching. The synthesized Cu/GO/SiO2/Pt structure demonstrated low operating voltages, a low operating power, a high resistance ratio, and good reliability, which makes it suitable for use as a next-generation nonvolatile memory structure.