▎ 摘　　要

We propose a liquid-phase fluorine-intercalation method for decoupling epitaxial graphene (EG) grown on SiC(0001) by only immersing EG sample into a mixture solution with HF, HNO3, and Mo plates. The results show that after fluorination, the XPS intensity ratio of C 1s from graphene and SiC significantly increases; moreover, it almost disappeared for the XPS component of the interfacial buffer layer corresponding to the C atoms bonded to the Si atoms of SIC substrate. It is unambiguous that the fluorine atoms intercalate between the buffer layer and SIC substrate, which decouples the graphene layer from the SIC substrate and leads to the increase of the thickness of the graphene layer. It is promising for this liquid-phase fluorine-intercalation method to decouple EG from the SiC(0001) and convert partial of the buffer layer to the graphene layer.